File Sharing Copyright For Information Professionals

Kristen Hanmer IST735: Copyright for Information Professionals Professor Jill Hurst-Wahl Assignment 3 9 November 2014 File sharing is a widely-used process that allows users to download and upload different types of files and share them with other users either over the internet or on a specific network. Almost as soon as file sharing was introduced and gained popularity with the public it began to raise questions regarding copyright infringement, and the first major lawsuit to deal with file sharing quickly followed. Although that case was decided almost 15 years ago, file sharing continues to remain popular and also continues to raise questions about copyright and intellectual property. In 1999 a 19-year-old college student co-founded a†¦show more content†¦For example, regarding music, copyright law allows a consumer to listen to a CD and even lend the original material to a friend. The matter of copyright infringement begins to come into play if the user decides to make a copy of the item or give a copy to a friend without permission, which is exactly what file sharing does. At the time file sharing was relatively new and many users were not familiar with how copyright was involved. Most people assumed since they paid for and owned physical copies of CDs they should also be allowed to copy that CD into their computer’s memory and share the electronic copy. The amount of file sharing that was taking place soon caught the attention of musicians and record companies who were afraid widespread distribution of the material would lead to huge monetary losses for the recording industry. Some artists were even experiencing â€Å"leaked material,† or material being uploaded and shared with others before it was even released publicly. The popular heavy metal band Metallica discovered one of their singles was circulating widely on Napster before being officially released, and even ended up playing on some radio stations. This caught the attention of the band and they soon realized their entire music catalogue was available for free on Napster and decided to file a lawsuit (Doan). Hip hop artist Dr. Dre also filed a lawsuit againstShow MoreRelatedShould People Be Penalized for Downloading and Unauthorized Copy of a Song or Movie806 Words   |  3 Pageshave allowed peer-to-peer sharing between people around the world possible. This peer-to -peer sharing has manifested the debate of copyright infringement, and many CEO’s of major Internet companies have been convicted for copyright infringement. Although peer-to-peer sharing has allowed direct access to songs, movies and TV shows, it has also had several repercussions on copyright holders. 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He claims that withRead MoreThe Pirate Bay5710 Words   |  23 Pagesof files, like pictures, videos, music, books, etc. However, in order for peers to be able to exchange files, a platform is needed. There are many platforms available that serve as a bridge technology so that peers can share files with other peers around the world. These platforms only serve as a connection devise and not as a piracy store. 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Unfortunately, the internet has impacted upon criminal and/or harmful activity in three main ways-this is after discounting the fact that many of the behaviors that have been identified as cybercrimes are not actually crimes as such but invoke civil remedies instead (Wall, 200a). First, information security is an organization-wideRead MoreShawn Fanning, Creator of Napster, Changed the Music Industry2085 Words   |  8 Pagesto share filers over a central server, specifically music files. This became known as Napster. Napster, which was created in 1999, became an internet sensation in the blink of an eye. It was a free file-sharing community that involved millions of users. Napster linked numbers computers to a centralized server, which was accessible to almost anyone that had access to the internet. 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Foundational Knowledge A Theories And Concepts - 1463 Words

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Department of Electrical and Computer Engineering Final Examination Free Essays

University of Waterloo Department of Electrical Computer Engineering ECE 231 Final Examination – Spring 2000 Aids: Formula Sheets (attached), Scientific Calculator Time Allowed: 3 hours Exam Type: Closed Book Instructor: C. R. Selvakumar Date: August 10, 2000 Max Marks: 100 Instructions: Answer all questions in PART-A and any two questions in full from PART-B. We will write a custom essay sample on Department of Electrical and Computer Engineering: Final Examination or any similar topic only for you Order Now State your assumptions clearly. Be concise, precise and clear in your answers General assumptions to be made when not specified in a question: (a) Assume that the semiconductor is Silicon. (b) Assume that the temperature T = 300K c) Use the data given in the formula sheets where needed. (d) Use the following expressions for the Effective Density of States in the Conduction Band (NC) and in the Valence Band (NV) respectively: 3 2 3 3 3 ? m ? ? T ? 2 ? 3 N C = 2. 5 ? 1019 ? ? cm ? m 0 ? ? 300 ? * n ? m* ? 2 ? T ? 2 p ?3 19 N V = 2. 5 ? 10 ? ? m ? ? 300? cm ? ? 0? PART -A 1a) Consider a Silicon p+-n diode with the following doping densities: NA = 1019 cm-3 and ND is 1016 cm-3. The diode has an area of 100  µm by 20  µm. (i) Without doing any calculations, sketch the capacitance versus reverse voltage (VR) starting from VR = 0. (4 marks) (ii) Calculate the voltage at which you will obtain the minimum capacitance and also determine (calculate) the minimum capacitance at that voltage. (10 marks) (iii) Derive the mathematical relations you use in calculating the quantities in (ii) above. (16 marks) 1b) Assuming that the p+ region and the n-region of the diode described in 1a) above are ‘long’ compared to the minority carrier diffusion lengths in those regions, show how you would obtain the complete Current-Voltage (I-V) Characteristic of the diode. You can assume that there is no recombination in the space-charge layer and you need not solve the continuity equation. Sketch the electron and hole current distributions in the entire device. (10 marks) Page 1 PART B 2a) Draw a clearly labelled band diagram of an n-p-n transistor under thermal equilibrium and superimpose on it a band diagram of the same transistor when it is under normal forward active mode of operations. (8 marks) 2b) Derive an expression for the common emitter current gain $ ($ = IC/IB), in terms of the doping densities in the different regions, thickness and carrier diffusivities and diffusion lengths. Assume that there is no recombination in the neutral base or in the space-charge layers. Also, assume that the conventional reverse saturation current of the reverse-biased diode, IC0, is negligible. Assume that short-region approximation is valid in the base and that the bandgap narrowing in the emitter is important. No need to solve continuity equations and you can assume the expected carrier distributions. (12 marks) 2c) Obtain the modified Ebers-Moll (EM) equations from the original EM equations given in the formula sheet. Sketch Common-Base output characteristics based on the modified EM equations and show the Forward Active Region of operation, Saturation Region and Cut-off Region. 10 marks) 3a) A silicon n-p-n transistor has an emitter doping NDE = 1020 cm-3 and a base doping NAB = 1016 cm-3. The emitter is 1  µm thick and assume that the hole diffusion length in the emitter is 0. 1 :m. The base is 0. 35 :m thick and you can use the values of mobilities and lifetimes given in the tables in the formula sheet to determine the electron diffusion length in the base. Verify that the short-region approximation is applicable to the base. Assume that the carrier recombinations in the neutral base an in the emitter-base depletion layer are zero. When this transistor is operating in the normal forward active mode with 0. volts forward bias across the emitter-base junction and a 2 volt reverse bias across the collector-base junction, what is the collector current density (JC) and the base current density (JB) ? You can assume that the depletion layer thicknesses are negligible at both junctions. Assume that bandgap narrowing for the emitter doping is 100 meV and the room temperature is 300K. (15 marks) 3b) What is the emitter efficiency of the transistor in 3a)? (5 marks) 3c) What do you understand by diffusion capacitance of a diode? Show (derive) that the diffusion capacitance of a p+ – n diode is approximately given by C Diffusion ? Qp Vt where Qp is the total injected minority hole charge on the n-side quasi-neutral=region and Vt is the thermal voltage (kT/q). Prove that the quantity Q p ? qAL p pn 0 e V Vt (10 marks) Page 2 4a) Consider an n-channel MOSFET and explain how the MOSFET operates using key band diagrams (along source, channel and drain and vertically along the metal gate, oxide and the channel region) and cross-sectional diagrams. State clearly wherefrom the channel electrons come and explain how this is controlled by the gate voltage. (10 marks) 4b) With reference to an n-p-n transistor, explain what is Early Effect and how it arises. Using an approximate sketch show the Early Voltage. Clearly illustrate your answer with the aid of carrier profiles and common-emitter output characteristics. (10 marks) 4c) Contrast the Temperature-dependence of Avalanche Breakdown Mechanism and Zener breakdown Mechanism. Illustrate your answer with sketches of Reverse bias I-V characteristics giving physical reasons. (10 marks) Page 3 ECE 231 1/4 Formula Sheet C. R. Selvakumar ECE 231 Formula Sheet 3 1 4? *2 g c (E) = 3 (2m n ) ( E ? E C )) 2 ; (E ? E c ) h 3 1 4? *2 2 g V (E) = 3 2m p ( E V ? E)) ; (E ? E V ) h 1 f FD (E) = (E-E F )/kT 1+ e p 0 = N V e (E V ? E F )/kT = n i e (Ei ? E F )/kT () n 0 p0 = n 2 i 3/2 ? 2? m* kT ? p N V = 2? ? 2 ? ? ?h ?  µn = q? c,n m* n and  µ p = q? c,p m* p ? max = ? qN A x p0 ? 0? r qN + x n0 D = ?0? r 1/2 x n0 ? 2? r ? 0 V0 ? NA =? ? q N D (N A + N D ) ? ? ? 2? r ? 0 V0 ? ND =? ? q N A (N A + N D ) ? ? 1/2 3/2 ? p 0 + N + = n0 + N A D + ? ?2 ? N D ? NA N + ? NA ? D ? + n2 ? + n0 = i 2 2 ? ? ? ? + ? N D x n0 = N A x p0 x p0 n 0 = N C e (E F ? EC )/ kT = n i e (E F ? E i )/kT ? 2? m* kT ? n N C = 2? ? 2 ?h ? ? kT ? n no p po ? kT ? N + N A ? D V0 = ln? ?= ln? ? q ? n2 ? q ? n2 ? i i p( x n0 ) = pn e qV / kT and ? pn = pn ( e qV / kT ? 1) 1/2 for n ? type , where ? c,n and ? ,p are mean time between collisions ? = qmn n + qm p p and r = 1/s dn ? dp ? ? ? J n = q? n µn ? + Dn ? ; J p = q ? p µ p ? ? D p ? ? ? dx ? dx ? D p Dn kT = = = 0. 0259 V at 300K  µ p  µn q n( ? x p0 ) = n p e qV / kT and ? n p = n p (e qV / kT ? 1) ? p( x n ) = ? pn e or ? p( x n ) = ? pn ( 0) e ? x p / Ln or ? n( x p ) = ? n p ( 0) e ?n( x p ) = ? n p e ? xn / L p ? x p / Ln ? Dn ? Dp ? I = qA? n p0 + p n0 ? (e qV/ kT ? 1) ? Lp ? Ln ? ? ? qN ? C j = A? Si d ? ? 2(V0 ? V ) ? 1/ 2 for p + ? n diffusion capacitance: C s = q 2 AL p kT p n0 e qV/kT for p + ? n n ? type regions of width, W: long base diode approx: I p = qAD p ? pn ( 0 ) Lp short base diode approx: I p = qAD p ?p 1 dJ p ?n 1 dJ n =? + G ? Rp; = ? + G ? Rn ?t q dx ?t q dx Wm = L p = D p ? p and Ln = Dn ? n VT = d 2V d? ? ? 2= = where ? = q ( p ? n + N d ? N a ) dx ? 0 ? r dx dV 1 dE c 1 dE v 1 dE t ?= ? = = = dx q dx q dx q dx ? xn / L p 2? Si ( 2? F ) qN a for VG Vth ? pn ( 0 ) W ? Si = ? 0 ? r ? Qd Qi + 2? F + ? ms ? , Ci Ci Q d = Q B = ? qN a x dm ,x dm = Wm ? Ci = Cox = 0 ox = i t ox d 1 2? ? Z? ? I D =  µ n Ci ? ? ? (VG ? VT )V D ? VD ? ? L? ? 2 ?  µ n Ci ? Z ? 2 I DSat = ? ? (V ? VT ) V Dsat = VG ? VT 2 ? L? G ECE 231 2/4 Formula Sheet C. R. Selvakumar Eber-Moll Model (n-p-n transistor) I EBO (e VBE / Vt ? 1) â€Å"RIC I CBO (e VBC /Vt ? 1) â€Å"FIE ? VBE ? ? VBC ? I E = ? I ES ? e Vt ? 1? + ? R I CS ? e Vt ? 1? ? ? ? ? ? ? ? ? ? VBE ? ? VBC ? Vt ?e ? + I CS ? e Vt ? 1? I C = ? R I ES ? ? 1? ? ? ? ? ? ? ECE 231 3/4 Formula Sheet C. R. Selvakumar Mobilities in Silicon N = doping density (cm ? 3 )  µ (N) =  µ min + Carrier type  µ0 N 1+ N ref :min :0 cm2 / (v. s) Nref cm-3 electron 88 1251. 8 1. 26 x 1017 hole 54. 3 406. 97 2. 35 x 1017 Doping density Mobilities Lifetimes (J) as function of doping density N :n :p 1 1 = + cA N2 ? ? SRH 1015 1016 1017 1018 1019 1020 1322. 3 1218. 2 777. 3 262. 1 114. 1 91. 5 457. 96 437. 87 330. 87 43. 23 68. 77 56. 28 cm 2 v. sec cm 2 v. sec cm ? 3 Doping density N cm-3 Lifetime J sec For both electrons and holes 1015 1016 1017 1018 1019 1020 9. 8 x 10-6 8. 3 x 10-6 3. 3 x 10-6 4. 5 x 10-7 3. 3 x 10-8 8. 3 x 10-10 Obtained using the above formula for lifetime using: JSRH = 10-5/(1 + 5 x 1016/N) and CA = 10-31 cm6s-1 ECE 231 4/ 4 Formula Sheet C. R. Selvakumar Properties of Silicon and Gallium Arsenide PROPERTY Si GaAs atoms or molecules/ cm3 5. 0 x 1022 4. 42 x 1022 atomic or molecular weight 28. 08 144. 63 density g/cm3 2. 33 5. 32 breakdown field V/cm 3 x 105 4 x 105 dielectric constant, gr 11. 8 13. 1 effective density of tates: Nc cm-3 Nv cm-3 Physical Constants ?1. 38Ãâ€"10 ? 23 J / K ? k ? ?8. 62Ãâ€"10 ? 5 eV / K ? ? 31 m0 9. 11Ãâ€"10 kg ?0 8. 85Ãâ€"10 ? 14 ? r (Si) 2. 8 x 1019 1. 04 x 1019 4. 7 x 1017 7. 0 x 1018 11. 8 ? r (SiO 2 ) 3. 9 h electron affinity, eV 4. 05 6. 62Ãâ€"10 c 3Ãâ€"10 q 1. 6Ãâ€"10 4. 07 energy gap, eV 1. 12 1. 43 intrinsic carrier conc. , ni cm-3 at T = 300K 1. 5 x 1010 1. 8 x 106 effective mass electrons holes m*n = 1. 1 m0 m*p = 0. 56 m0 m*n = 0. 067 m0 m*p = 0. 48 m0 intrinsic mobility @ 300K electrons cm2/Vs holes cm2/Vs 1350 480 8500 400 diffusivity @300K: electrons cm2/s holes cm2/s 35 12. 5 220 10 F / cm 10 ? 34 J ? s cm / s ? 19 C How to cite Department of Electrical and Computer Engineering: Final Examination, Essay examples